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agilent ATF-52189 high linearity mode [1] enhancement pseudomorphic hemt in sot 89 package data sheet features ? single voltage operation ? high linearity and p1db ? low noise figure ? excellent uniformity in product specifications ? sot 89 standard package ? point mttf > 300 years [2] ? msl-1 and lead-free ? tape-and-reel packaging option available specifications 2 ghz, 4.5v, 200 ma (typ.) ? 42 dbm output ip3 ? 27 dbm output power at 1db gain compression ? 1.50 db noise figure ? 16.0 db gain ? 55% pae at p1db ? lfom [3] 12.5 db applications ? front-end lna q2 and q3, driver or pre-driver amplifier for cellular/ pcs and wcdma wireless infrastructure ? driver amplifier for wlan, wll/ rll and mmds applications ? general purpose discrete e-phemt for other high linearity applications pin connections and package marking notes: package marking provides orientation and identification: 2g = device code x = month code indicates the month of manufacture. d = drain s = source g = gate notes: 1. enhancement mode technology employs a single positive v gs , eliminating the need of negative gate voltage associated with conventional depletion mode devices. 2. refer to reliability datasheet for detailed mttf data. 3. linearity figure of merit (lfom) is oip3 divided by dc bias power. description agilent technologiess ATF-52189 is a single-voltage high linearity, low noise e-phemt fet packaged in a low cost surface mount sot89 package. the device is ideal as a medium-power, high-linearity amplifier. its operating frequency range is from 50 mhz to 6 ghz. ATF-52189 is ideally suited for cellular/pcs and wcdma wireless infrastructure, wlan, wll and mmds application, and general purpose discrete e-phemt amplifiers which require medium power and high linearity. all devices are 100% rf and dc tested. 2gx bottom view ds s g top view gs s d
2 ATF-52189 absolute maximum ratings [1] absolute symbol parameter units maximum v ds drain C source voltage [2] v7 v gs gate C source voltage [2] v -5 to 1.0 v gd gate drain voltage [2] v -5 to 1.0 i ds drain current [2] ma 500 i gs gate current ma 46 p diss total power dissipation [3] w 1.5 p in max. rf input power dbm +27 t ch channel temperature c 150 t stg storage temperature c -65 to 150 notes: 1. operation of this device above any one of these parameters may cause permanent damage. 2. assuming dc quiescent conditions. 3. board (package belly) temperature t b is 25 c. derate 19.25 mw/ c for t b > 72 c. 4. channel-to-board thermal resistance measured using 150 c liquid crystal measurement method. ATF-52189 electrical specifications t a = 25 c, dc bias for rf parameters is vds = 4.5v and ids = 200 ma unless otherwise specified. symbol parameters and test conditions units min. typ. max. vgs operational gate voltage vds = 4.5v, ids = 200 ma v 0.62 vth threshold voltage vds = 4.5v, ids = 16 ma v 0.28 ids drain to source current vds = 4.5v, vgs = 0v a 14.8 gm transconductance vds = 4.5v, gm = ? ids/ ? vgs; mmho 1300 ? vgs = vgs1 C vgs2 vgs1 = 0.55v, vgs2 = 0.5v igss gate leakage current vds = 0v, vgs = -4v a -20.0 0.49 nf noise figure f = 2 ghz db 1.50 f = 900 mhz db 1.25 g gain [1] f = 2 ghz db 14.8 16.0 17.8 f = 900 mhz db 16.5 oip3 output 3 rd order intercept point [1] f = 2 ghz dbm 38.5 42.0 f = 900 mhz dbm 42.0 p1db output 1db compressed [1] f = 2 ghz dbm 25.5 27.0 f = 900 mhz dbm 27.2 pae power added efficiency f = 2 ghz % 40.0 55.0 f = 900 mhz % 50.0 aclr adjacent channel leakage offset bw = 5 mhz dbc -58.0 power ratio [1,2] offset bw = 10 mhz dbc -66.0 notes: 1. measurements at 2 ghz obtained using production test board described in figure 1. 2. aclr test spec is based on 3gpp ts 25.141 v5.3.1 (2002-06) - test model 1 - active channels: pccpch + sch + cpich + pich + sccpch + 64 dpch (sf=128) - freq = 2140 mhz - pin = -8 dbm - channel integrate bandwidth = 3.84 mhz thermal resistance [2,4] ch-b = 52 c/w
3 figure 1. block diagram of the 2 ghz production test board used for nf, gain, oip3 , p1db, pae and aclr measurements. this circuit achieves a trade-off between optimal oip3, p1db and vswr. circuit losses have been de-embedded from actual measurements. input output output matching circuit _mag=0.32 _ang=-176.6 input matching circuit _mag=0.76 _ang=-131.3 dut notes: 1. distribution data sample size is 500 samples taken from 3 different wafers. future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 2. measurements are made on production test board, which represents a trade-off between optimal oip3, p1db and vswr. circuit losses have been de-embedded from actual measurements. product consistency distribution charts [1,2] figure 2. oip3 @ 2 ghz, 4.5v/200 ma. lsl = 38.5 dbm, nominal = 42.4 dbm. oip3 (dbm) frequency 41.5 42 42.5 43 43.5 150 120 90 60 30 0 stdev=0.35 +3 std C3 std figure 3. p1db @ 2 ghz, 4.5v, 200 ma. lsl = 25.5 dbm, nominal = 27.1 dbm. p1db (dbm) frequency 26.25 26.75 27.25 27.75 28.25 150 120 90 60 30 0 stdev=0.30 C3 std +3 std figure 4. gain @ 2 ghz, 4.5v, 200 ma. lsl = 14.8 dbm, nominal = 16.1 dbm, usl = 17.8 db. gain (dbm) frequency 15.5 16 16.5 17 150 120 90 60 30 0 stdev=0.16 C3 std +3 std figure 5. nf @ 2 ghz, 4.5v, 200 ma. nominal = 1.5 dbm. nf (dbm) frequency 1 1.25 1.5 1.75 2 150 120 90 60 30 0 stdev=0.10 C3 std +3 std
4 gamma load and source at optimum oip3 and p1db tuning conditions the devices optimum oip3 and p1db measurements were determined using a maury load pull system at 4.5v, 200 ma quiesent bias. typical gammas at optimum oip3 [1] freq gamma source gamma load oip3 gain p1db pae (ghz) mag ang (deg) mag ang (deg) (dbm) (db) (dbm) (%) 0.9 0.7511 -132.82 0.6444 -157.38 42.0 16.5 27.2 49.7 2.0 0.7577 -131.31 0.3236 -176.55 42.0 15.7 26.8 54.9 2.4 0.7625 -128.49 0.2665 -148.09 41.0 13.6 26.5 49.5 3.9 0.7432 -94.91 0.4125 -98.27 40.0 10.8 27.3 49.1 typical gammas at optimum p1db [1] freq gamma source gamma load oip3 gain p1db pae (ghz) mag ang (deg) mag ang (deg) (dbm) (db) (dbm) (%) 0.9 0.7786 139.82 0.5494 -177.76 38.6 17.3 28.4 58.3 2.0 0.7052 -168.54 0.6981 -165.37 37.5 14.8 29.0 48.6 2.4 0.7117 -161.45 0.6624 -159.44 37.3 12.0 29.3 48.2 3.9 0.3379 -100.92 0.6151 -126.28 37.0 9.1 28.0 46.2 note: 1. typical describes additional product performance information that is not covered by the product warranty. figure 6. typical iv curve. vds (v) ids (ma) 07 1 2 3 4 5 6 600 500 400 300 200 100 0 0.4v 0.5v 0.6v 0.7v 0.8v
5 ATF-52189 typical performance curves (at 25 c unless specified otherwise) tuned for optimal oip3 at vd = 4.5v, ids = 200 ma. figure 7. oip3 vs. ids and vds at 900 mhz. ids (ma) oip3 (dbm) 100 400 150 200 250 300 350 45 40 35 30 25 20 15 3v 4v 4.5v figure 8. oip3 vs. ids and vds at 2 ghz. ids (ma) oip3 (dbm) 100 400 150 200 250 300 350 45 40 35 30 25 20 15 3v 4v 4.5v figure 9. oip3 vs. ids and vds at 3.9 ghz. ids (ma) oip3 (dbm) 100 400 150 200 250 300 350 45 40 35 30 25 20 15 3v 4v 4.5v figure 10. small signal gain vs. ids and vds at 900 mhz. ids (ma) gain (db) 100 400 150 200 250 300 350 19 18 17 16 15 14 13 12 3v 4v 4.5v figure 11. small signal gain vs. ids and vds at 2 ghz. ids (ma) gain (db) 100 400 150 200 250 300 350 19 18 17 16 15 14 13 12 3v 4v 4.5v figure 12. small signal gain vs. ids and vds at 3.9 ghz. ids (ma) gain (db) 100 400 150 200 250 300 350 14 13 12 11 10 9 8 7 3v 4v 4.5v figure 13. small signal gain/pout/pae vs. pin at vds = 3v and frequency = 900 mhz. pin (dbm) gain (db) & pout (dbm) pae (%) -10 14 -6 -2 2 6 10 30 25 20 15 10 5 0 70 60 50 40 30 20 10 0 gain_3v pout_3v pae_3v figure 14. small signal gain/pout/pae vs. pin at vds = 4v and frequency = 900 mhz. pin (dbm) gain (db) & pout (dbm) pae (%) -10 14 -6 -2 2 6 10 30 25 20 15 10 5 0 70 60 50 40 30 20 10 0 gain_4v pout_4v pae_4v figure 15. small signal gain/pout/pae vs. pin at vds = 4.5v and frequency = 900 mhz. pin (dbm) gain (db) & pout (dbm) pae (%) -10 14 -6 -2 2 6 10 30 25 20 15 10 5 0 70 60 50 40 30 20 10 0 gain_4.5v pout_4.5v pae_4.5v note: bias current for the above charts are quiescent conditions. actual level may increase depending on amount of rf drive.
6 ATF-52189 typical performance curves (at 25 c unless specified otherwise), continued tuned for optimal oip3 at vd = 4.5v, ids = 200 ma. figure 16. small signal gain/pout/pae vs. pin at vds = 3v and frequency = 2 ghz. pin (dbm) gain (db) & pout (dbm) pae (%) -10 18 -6 -2 2 6 10 14 30 25 20 15 10 5 0 80 70 60 50 40 30 20 10 0 gain_3v pout_3v pae_3v figure 17. small signal gain/pout/pae vs. pin at vds = 4v and frequency = 2 ghz. pin (dbm) gain (db) & pout (dbm) pae (%) -10 18 -6 -2 2 6 10 14 30 25 20 15 10 5 0 80 70 60 50 40 30 20 10 0 gain_4v pout_4v pae_4v figure 18. small signal gain/pout/pae vs. pin at vds = 4.5v and frequency = 2 ghz. pin (dbm) gain (db) & pout (dbm) pae (%) -10 18 -6 -2 2 6 10 14 30 25 20 15 10 5 0 80 70 60 50 40 30 20 10 0 gain_4.5v pout_4.5v pae_4.5v figure 19. small signal gain/pout/pae vs. pin at vds = 3v and frequency = 3.9 ghz. pin (dbm) gain (db) & pout (dbm) pae (%) -10 18 -6 -2 2 6 10 14 30 25 20 15 10 5 0 80 70 60 50 40 30 20 10 0 gain_3v pout_3v pae_3v figure 20. small signal gain/pout/pae vs. pin at vds = 4v and frequency = 3.9 ghz. pin (dbm) gain (db) & pout (dbm) pae (%) -10 18 -6 -2 2 6 10 14 30 25 20 15 10 5 0 60 50 40 30 20 10 0 gain_4v pout_4v pae_4v figure 21. small signal gain/pout/pae vs. pin at vds = 4.5v and frequency = 3.9 ghz. pin (dbm) gain (db) & pout (dbm) pae (%) -10 18 -6 -2 2 6 10 14 30 25 20 15 10 5 0 60 50 40 30 20 10 0 gain_4.5v pout_4.5v pae_4.5v note: bias current for the above charts are quiescent conditions. actual level may increase depending on amount of rf drive.
7 ATF-52189 typical performance curves , continued tuned for optimal oip3 at vd = 4.5v, ids = 200 ma, over temperature and frequency figure 22. oip3 vs. temperature and frequency at optimum oip3. frequency (ghz) oip3 (dbm) 0.5 4 1 1.5 2 2.5 3 3.5 46 44 42 40 38 36 34 -40 c 25 c 80 c figure 23. gain vs. temperature and frequency at optimum oip3. frequency (ghz) gain (db) 0.5 4 1 1.5 2 2.5 3 3.5 18 16 14 12 10 8 6 -40 c 25 c 80 c figure 24. p1db vs. temperature and frequency at optimum oip3. frequency (ghz) p1db (dbm) 0.5 4 1 1.5 2 2.5 3 3.5 28 27.5 27 26.5 26 25.5 25 -40 c 25 c 80 c figure 25. pae vs. temperature and frequency at optimum oip3. frequency (ghz) pae (%) 0.5 4 1 1.5 2 2.5 3 3.5 60 55 50 45 40 35 30 -40 c 25 c 80 c note: bias current for the above charts are quiescent conditions. actual level may increase depending on amount of rf drive.
8 ATF-52189 typical performance curves, (at 25 c unless specified otherwise) tuned for optimal p1db at vd = 4.5v, ids = 200 ma. figure 26. oip3 vs ids and vds at 900 mhz. ids (ma) oip3 (dbm) 100 400 150 200 250 300 350 45 40 35 30 25 20 15 3v 4v 4.5v figure 27. oip3 vs. ids and vds at 2 ghz. ids (ma) oip3 (dbm) 100 400 150 200 250 300 350 45 40 35 30 25 20 15 3v 4v 4.5v figure 28. oip3 vs ids and vds at 3.9 ghz. ids (ma) oip3 (dbm) 100 400 150 200 250 300 350 45 40 35 30 25 20 15 3v 4v 4.5v figure 29. small signal gain vs. ids and vds at 900 mhz. ids (ma) gain (db) 100 400 150 200 250 300 350 19 17 15 13 11 9 7 3v 4v 4.5v figure 30. small signal gain vs. ids and vds at 2 ghz. ids (ma) gain (db) 100 400 150 200 250 300 350 17 15 13 11 9 7 5 3v 4v 4.5v figure 31. small signal gain vs. ids and vds at 3.9 ghz. ids (ma) gain (db) 100 400 150 200 250 300 350 17 15 13 11 9 7 5 3v 4v 4.5v figure 32. small signal gain/pout/pae vs. pin at vds = 3v and frequency = 900 mhz. pin (dbm) gain (db) & pout (dbm) pae (%) -10 14 -6 -2 2 6 10 35 30 25 20 15 10 5 0 70 60 50 40 30 20 10 0 gain_3v pout_3v pae_3v figure 33. small signal gain/pout/pae vs. pin at vds = 4v and frequency = 900 mhz. pin (dbm) gain (db) & pout (dbm) pae (%) -10 14 -6 -2 2 6 10 35 30 25 20 15 10 5 0 70 60 50 40 30 20 10 0 gain_4v pout_4v pae_4v figure 34. small signal gain/pout/pae vs. pin at vds = 4.5v and frequency = 900 mhz. pin (dbm) gain (db) & pout (dbm) pae (%) -10 14 -6 -2 2 6 10 35 30 25 20 15 10 5 0 70 60 50 40 30 20 10 0 gain_4.5v pout_4.5v pae_4.5v note: bias current for the above charts are quiescent conditions. actual level may increase depending on amount of rf drive.
9 ATF-52189 typical performance curves (at 25 c unless specified otherwise) , continued tuned for optimal p1db at vd = 4.5v, ids = 200 ma. figure 35. small signal gain/pout/pae vs. pin at vds = 3v and frequency = 2 ghz. pin (dbm) gain (db) & pout (dbm) pae (%) -10 18 -6 -2 2 6 10 14 35 30 25 20 15 10 5 0 60 50 40 30 20 10 0 gain_3v pout_3v pae_3v figure 36. small signal gain/pout/pae vs. pin at vds = 4v and frequency = 2 ghz. pin (dbm) gain (db) & pout (dbm) pae (%) -10 18 -6 -2 2 6 10 14 35 30 25 20 15 10 5 0 60 50 40 30 20 10 0 gain_4v pout_4v pae_4v figure 37. small signal gain/pout/pae vs. pin at vds = 4.5v and frequency = 2 ghz. pin (dbm) gain (db) & pout (dbm) pae (%) -10 18 -6 -2 2 6 10 14 35 30 25 20 15 10 5 0 60 50 40 30 20 10 0 gain_4.5v pout_4.5v pae_4.5v figure 38. small signal gain/pout/pae vs. pin at vds = 3v and frequency = 3.9 ghz. pin (dbm) gain (db) & pout (dbm) pae (%) -8 24 -4 0 4 8 12 16 20 35 30 25 20 15 10 5 0 70 60 50 40 30 20 10 0 gain_3v pout_3v pae_3v figure 39. small signal gain/pout/pae vs. pin at vds = 4v and frequency = 3.9 ghz. pin (dbm) gain (db) & pout (dbm) pae (%) -8 24 -4 0 4 8 12 16 20 35 30 25 20 15 10 5 0 70 60 50 40 30 20 10 0 gain_4v pout_4v pae_4v figure 40. small signal gain/pout/pae vs. pin at vds = 4.5v and frequency = 3.9 ghz. pin (dbm) gain (db) & pout (dbm) pae ( % ) -8 24 -4 0 4 8 12 16 20 35 30 25 20 15 10 5 0 70 60 50 40 30 20 10 0 gain_4.5v pout_4.5v pae_4.5v note: bias current for the above charts are quiescent conditions. actual level may increase depending on amount of rf drive.
10 ATF-52189 typical performance curves, continued tuned for optimal p1db at vd = 4.5v, ids = 200 ma, over temperature and frequency. note: bias current for the above charts are quiescent conditions. actual level may increase depending on amount of rf drive. figure 41. oip3 vs. temperature and frequency at optimum p1db. frequency (ghz) oip3 (dbm) 0.5 4 1 1.5 2 2.5 3 3.5 40 38 36 34 32 30 28 -40 c 25 c 80 c figure 42. gain vs. temperature and frequency at optimum p1db. frequency (ghz) gain (db) 0.5 4 1 1.5 2 2.5 3 3.5 18 16 14 12 10 8 6 -40 c 25 c 80 c figure 43. p1db vs. temperature and frequency at optimum p1db. frequency (ghz) p1db (dbm) 0.5 4 1 1.5 2 2.5 3 3.5 30 29.5 29 28.5 28 27.5 27 -40 c 25 c 80 c figure 44. pae vs. temperature and frequency at optimum p1db. frequency (ghz) pae (%) 0.5 4 1 1.5 2 2.5 3 3.5 60 55 50 45 40 35 30 -40 c 25 c 80 c
11 notes: 1. f min values at 2 ghz and higher are based on measurements while the f min below 2 ghz have been extrapolated. the f min values are based on a set of 16 noise figure measurements made at 16 different impedances using an atn np5 test system. from these measurements a true fmin is calculated. refer to the noise parameter application section for more information. 2. s and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the gate lead. the output reference plane is at the end of the drain lead. ATF-52189 typical scattering and noise parameters at 25 c, v ds = 4.5v, i ds = 280 ma figure 45. msg/mag & |s21| 2 vs. frequency at 4.5v/280 ma. frequency (ghz) msg/mag & |s21| 2 (db) 018 2 4 6 8 10 12 14 16 40 30 20 10 0 -10 -20 -30 s21 mag msg freq s11 s21 s12 msg/ma g (gh z )m ag. a ng. (db) m ag. a ng. (db) m ag. a ng. m ag. a ng. db 0.1 0.544 -91.7 31.93 39.502 144.2 -39.17 0.011 52.6 0.289 -99.7 35.55 0.2 0.704 -128.0 29.23 28.943 122.7 -35.39 0.017 40.4 0.397 -130.4 32.31 0.3 0.777 -146.6 26.78 21.823 109.6 -33.98 0.020 33.2 0.446 -145.8 30.38 0.4 0.813 -158.4 24.74 17.257 100.6 -33.15 0.022 28.6 0.470 -155.3 28.95 0.5 0.856 -171.5 21.75 12.238 93.9 -33.98 0.020 26.1 0.551 -170.8 27.87 0.6 0.866 -176.8 20.26 10.303 89.3 -33.56 0.021 25.4 0.559 -174.5 26.91 0.7 0.872 178.8 19.00 8.913 85.4 -33.56 0.021 25.1 0.562 -177.5 26.28 0.8 0.874 175.1 17.92 7.866 81.8 -33.15 0.022 25.0 0.564 179.8 25.53 0.9 0.876 171.6 16.96 7.050 78.4 -32.77 0.023 25.0 0.564 177.4 24.86 1.0 0.880 168.4 16.08 6.366 75.3 -32.40 0.024 25.0 0.563 175.2 24.24 1.5 0.881 154.5 12.74 4.333 61.0 -31.06 0.028 24.2 0.558 165.5 21.90 2.0 0.882 141.6 10.39 3.309 47.5 -29.63 0.033 21.5 0.549 156.5 18.26 2.5 0.879 128.6 8.63 2.702 34.1 -28.18 0.039 16.7 0.542 147.4 16.05 3.0 0.874 115.1 7.31 2.320 20.5 -27.26 0.043 9.6 0.543 138.9 14.47 3.5 0.882 105.8 6.39 2.087 9.7 -26.92 0.045 3.3 0.560 130.4 13.83 4.0 0.889 96.5 5.36 1.853 -1.2 -26.60 0.047 -3.1 0.578 121.8 13.09 5.0 0.903 77.9 2.83 1.385 -22.8 -25.98 0.050 -15.7 0.613 104.8 11.24 6.0 0.918 59.3 -0.75 0.918 -44.5 -25.41 0.054 -28.4 0.648 87.7 8.51 7.0 0.948 43.4 -3.31 0.683 -63.8 -26.02 0.050 -39.9 0.687 74.6 8.14 8.0 0.960 31.6 -5.68 0.520 -81.4 -26.74 0.046 -51.6 0.729 61.0 7.41 9.0 0.941 23.4 -8.20 0.389 -96.9 -28.18 0.039 -63.8 0.773 47.8 4.33 10.0 0.946 14.0 -10.29 0.306 -112.0 -29.63 0.033 -80.6 0.805 36.5 3.52 11.0 0.937 3.1 -12.11 0.248 -128.9 -32.77 0.023 -113.1 0.825 26.9 2.11 12.0 0.914 -3.8 -13.68 0.207 -143.7 -37.72 0.013 -154.6 0.843 16.9 -0.19 13.0 0.951 -15.1 -15.70 0.164 -163.9 -37.08 0.014 106.3 0.842 7.7 0.27 14.0 0.948 -19.8 -17.79 0.129 -172.6 -37.72 0.013 51.0 0.849 1.1 -2.38 15.0 0.939 -21.2 -18.56 0.118 179.7 -41.94 0.008 60.4 0.879 -4.4 -2.87 16.0 0.948 -24.7 -18.94 0.113 171.7 -46.02 0.005 71.8 0.876 -8.4 -2.64 17.0 0.947 -33.0 -17.99 0.126 157.7 -38.42 0.012 123.0 0.884 -13.3 -1.07 18 . 00 . 903 - 45 . 1 - 17 . 14 0 . 139 140 . 5 - 33 . 98 0 . 020 114 . 50 . 859 - 21 . 3 - 3 . 66 s22 freq fmin rn/50 ga ghz db mag ang db 0.5 1.45 0.704 -175.0 0.80 21.63 1.0 1.60 0.706 -162.6 0.90 18.91 2.0 1.90 0.727 -137.5 1.10 16.10 3.0 2.20 0.763 -112.8 1.20 12.97 4.0 2.46 0.804 -91.9 1.20 11.03 5.0 2.79 0.855 -68.9 1.20 9.62 6.0 3.09 0.896 -51.5 1.20 8.46 7.0 3.39 0.923 -38.6 1.20 7.62 8.0 3.69 0.930 -31.0 1.20 6.50 gamma opt
12 notes: 1. f min values at 2 ghz and higher are based on measurements while the f min below 2 ghz have been extrapolated. the f min values are based on a set of 16 noise figure measurements made at 16 different impedances using an atn np5 test system. from these measurements a true fmin is calculated. refer to the noise parameter application section for more information. 2. s and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the gate lead. the output reference plane is at the end of the drain lead. ATF-52189 typical scattering and noise parameters at 25 c, v ds = 4.5v, i ds = 200 ma figure 46. msg/mag & |s21| 2 vs. frequency at 4.5v/200 ma. frequency (ghz) msg/mag & |s21| 2 (db) 018 2 4 6 8 10 12 14 16 40 30 20 10 0 -10 -20 -30 s21 mag msg freq s11 s21 s12 msg/ma g (gh z )m ag. a ng. (db) m ag. a ng. (db) m ag. a ng. m ag. a ng. db 0.1 0.848 -84.4 33.58 47.752 136.0 -37.08 0.014 51.6 0.360 -104.6 35.33 0.2 0.856 -124.7 30.01 31.649 114.6 -34.42 0.019 35.9 0.442 -136.7 32.22 0.3 0.863 -144.9 27.16 22.811 102.9 -33.15 0.022 28.7 0.473 -151.3 30.16 0.4 0.868 -157.3 24.94 17.656 95.1 -32.77 0.023 24.7 0.487 -159.9 28.85 0.5 0.882 -170.8 21.81 12.320 89.4 -33.56 0.021 22.5 0.562 -173.9 27.68 0.6 0.885 -176.3 20.27 10.315 85.5 -33.56 0.021 22.2 0.567 -177.2 26.91 0.7 0.886 179.2 18.98 8.894 82.0 -33.15 0.022 22.1 0.568 -179.8 26.07 0.8 0.886 175.4 17.88 7.831 78.8 -32.77 0.023 22.1 0.568 177.7 25.32 0.9 0.885 171.9 16.91 7.007 75.8 -32.40 0.024 22.3 0.567 175.6 24.65 1.0 0.887 168.6 16.01 6.320 72.9 -32.40 0.024 22.4 0.566 173.6 24.21 1.5 0.886 154.7 12.65 4.291 59.3 -30.75 0.029 22.1 0.560 164.3 21.70 2.0 0.886 141.7 10.29 3.271 46.3 -29.37 0.034 19.7 0.549 155.6 18.69 2.5 0.881 128.7 8.52 2.668 33.1 -28.18 0.039 15.0 0.543 146.6 16.11 3.0 0.879 116.3 7.28 2.312 20.4 -27.38 0.043 8.7 0.548 138.1 14.68 3.5 0.885 106.8 6.33 2.073 9.5 -27.01 0.045 2.5 0.564 129.6 13.97 4.0 0.891 97.4 5.27 1.835 -1.4 -26.65 0.047 -3.8 0.580 121.0 13.15 5.0 0.903 78.4 2.66 1.358 -23.2 -25.98 0.050 -16.3 0.613 104.0 11.08 6.0 0.915 59.5 -1.10 0.881 -45.0 -25.35 0.054 -28.8 0.645 86.9 8.05 7.0 0.948 43.4 -3.44 0.673 -64.1 -26.02 0.050 -40.5 0.686 74.4 8.04 8.0 0.960 31.6 -5.78 0.514 -81.8 -26.74 0.046 -52.4 0.729 60.9 7.37 9.0 0.941 23.4 -8.34 0.383 -97.0 -28.18 0.039 -64.2 0.772 47.7 4.20 10.0 0.945 14.0 -10.40 0.302 -112.0 -29.63 0.033 -80.8 0.805 36.5 3.35 11.0 0.938 3.0 -12.32 0.242 -129.2 -33.15 0.022 -113.9 0.826 26.8 1.99 12.0 0.914 -3.7 -13.89 0.202 -144.1 -38.42 0.012 -156.0 0.843 16.9 -0.42 13.0 0.953 -15.1 -15.86 0.161 -164.5 -37.72 0.013 98.9 0.843 7.7 0.22 14.0 0.946 -19.8 -17.92 0.127 -172.6 -39.17 0.011 49.2 0.849 1.0 -2.67 15.0 0.939 -21.2 -18.64 0.117 178.8 -43.10 0.007 72.1 0.877 -4.5 -2.97 16.0 0.948 -24.7 -19.17 0.110 170.6 -44.44 0.006 76.0 0.874 -8.4 -2.92 17.0 0.947 -33.1 -18.13 0.124 157.2 -38.42 0.012 119.6 0.883 -13.2 -1.28 18.0 0.900 -45.1 -17.27 0.137 140.4 -33.98 0.020 115.7 0.859 -21.3 -3.92 s22 freq fmin rn/50 ga ghz db mag ang db 0.5 0.92 0.409 177.1 0.60 19.38 1.0 1.02 0.480 -169.1 0.80 17.52 2.0 1.21 0.602 -141.8 1.10 15.64 3.0 1.41 0.700 -115.6 1.10 12.74 4.0 1.59 0.772 -93.6 1.10 11.05 5.0 1.81 0.841 -69.9 1.10 9.72 6.0 2.01 0.891 -52.2 1.10 8.62 7.0 2.21 0.931 -39.1 1.10 7.78 8.0 2.41 0.965 -31.5 1.20 6.72 gamma opt
13 notes: 1. f min values at 2 ghz and higher are based on measurements while the f min below 2 ghz have been extrapolated. the f min values are based on a set of 16 noise figure measurements made at 16 different impedances using an atn np5 test system. from these measurements a true fmin is calculated. refer to the noise parameter application section for more information. 2. s and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the gate lead. the output reference plane is at the end of the drain lead. ATF-52189 typical scattering and noise parameters at 25 c, v ds = 4.5v, i ds = 120 ma figure 47. msg/mag & |s21| 2 vs. frequency at 4.5v/120 ma. frequency (ghz) msg/mag & |s21| 2 (db) 018 2 4 6 8 10 12 14 16 40 30 20 10 0 -10 -20 -30 s21 msg mag freq s11 s21 s12 msg/ma g (gh z )m ag. a ng. (db) m ag. a ng. (db) m ag. a ng. m ag. a ng. db 0.1 0.926 -80.9 33.47 47.170 135.8 -35.92 0.016 51.6 0.389 -96.0 34.70 0.2 0.891 -121.5 29.88 31.192 114.3 -33.15 0.022 34.6 0.447 -131.4 31.52 0.3 0.882 -142.5 27.03 22.457 102.7 -32.04 0.025 26.7 0.471 -147.6 29.53 0.4 0.879 -155.4 24.79 17.360 94.8 -31.70 0.026 22.2 0.482 -157.0 28.25 0.5 0.885 -169.7 21.67 12.120 88.9 -32.77 0.023 19.7 0.551 -172.5 27.22 0.6 0.886 -175.4 20.13 10.145 85.0 -32.40 0.024 19.0 0.555 -176.0 26.26 0.7 0.886 -180.0 18.83 8.743 81.6 -32.40 0.024 18.6 0.557 -178.8 25.61 0.8 0.886 176.1 17.72 7.695 78.4 -32.04 0.025 18.5 0.557 178.7 24.88 0.9 0.885 172.5 16.76 6.883 75.3 -31.70 0.026 18.4 0.555 176.5 24.23 1.0 0.887 169.3 15.86 6.209 72.4 -31.70 0.026 18.3 0.554 174.4 23.78 1.5 0.884 155.1 12.49 4.212 58.8 -30.46 0.030 17.8 0.548 165.1 21.47 2.0 0.884 142.1 10.13 3.210 45.7 -29.12 0.035 15.6 0.538 156.3 19.17 2.5 0.880 129.1 8.36 2.618 32.5 -27.96 0.040 11.2 0.532 147.4 16.16 3.0 0.875 115.5 7.03 2.246 18.9 -27.08 0.044 4.9 0.532 139.0 14.43 3.5 0.882 106.2 6.10 2.018 8.1 -26.80 0.046 -1.1 0.549 130.5 13.76 4.0 0.889 96.8 5.06 1.791 -2.8 -26.54 0.047 -7.1 0.567 122.0 12.99 5.0 0.903 78.1 2.52 1.337 -24.5 -26.04 0.050 -19.0 0.603 105.1 11.06 6.0 0.917 59.4 -1.09 0.882 -46.2 -25.56 0.053 -31.0 0.638 88.1 8.23 7.0 0.947 43.5 -3.64 0.658 -65.5 -26.20 0.049 -42.2 0.681 75.1 7.89 8.0 0.959 31.7 -6.00 0.501 -83.3 -26.74 0.046 -53.9 0.725 61.6 7.19 9.0 0.941 23.4 -8.64 0.370 -98.9 -28.40 0.038 -65.8 0.770 48.2 4.00 10.0 0.946 14.1 -10.69 0.292 -114.3 -29.63 0.033 -82.9 0.805 36.9 3.26 11.0 0.936 3.1 -12.54 0.236 -131.4 -33.15 0.022 -116.4 0.826 27.2 1.71 12.0 0.914 -3.7 -14.24 0.194 -146.0 -37.72 0.013 -159.1 0.843 17.2 -0.74 13.0 0.951 -14.9 -16.25 0.154 -166.9 -37.72 0.013 104.3 0.843 8.0 -0.35 14.0 0.948 -19.8 -18.34 0.121 -175.3 -39.17 0.011 56.9 0.850 1.2 -2.88 15.0 0.937 -21.1 -19.02 0.112 176.1 -40.92 0.009 79.5 0.877 -4.2 -3.46 16.0 0.949 -24.5 -19.66 0.104 167.9 -43.10 0.007 74.4 0.878 -8.2 -3.21 17.0 0.947 -32.9 -18.56 0.118 154.7 -37.72 0.013 117.9 0.887 -13.1 -1.56 18.0 0.906 -45.1 -17.79 0.129 138.1 -33.56 0.021 111.8 0.862 -21.1 -4.11 s22 freq fmin rn/50 ga ghz db mag ang db 0.5 0.67 0.263 166.7 0.50 19.36 1.0 0.76 0.361 -177.3 0.80 17.64 2.0 0.95 0.524 -146.8 1.00 15.04 3.0 1.13 0.652 -118.4 1.10 12.27 4.0 1.30 0.741 -95.3 1.10 10.83 5.0 1.50 0.826 -70.9 1.10 9.62 6.0 1.68 0.887 -52.9 1.10 8.48 7.0 1.86 0.939 -39.7 1.10 7.85 8.0 1.88 0.989 -31.8 1.20 4.25 gamma opt
14 notes: 1. f min values at 2 ghz and higher are based on measurements while the f min below 2 ghz have been extrapolated. the f min values are based on a set of 16 noise figure measurements made at 16 different impedances using an atn np5 test system. from these measurements a true fmin is calculated. refer to the noise parameter application section for more information. 2. s and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the gate lead. the output reference plane is at the end of the drain lead. ATF-52189 typical scattering and noise parameters at 25 c, v ds = 4.0v, i ds = 200 ma figure 48. msg/mag & |s21| 2 vs. frequency at 4.0v/200 ma. frequency (ghz) msg/mag & |s21| 2 (db) 018 2 4 6 8 10 12 14 16 40 30 20 10 0 -10 -20 -30 s21 msg mag freq s11 s21 s12 msg/ma g (gh z )m ag. a ng. (db) m ag. a ng. (db) m ag. a ng. m ag. a ng. db 0.1 0.866 -84.2 33.69 48.364 135.7 -37.08 0.014 51.3 0.366 -106.5 35.38 0.2 0.865 -124.5 30.08 31.913 114.3 -33.98 0.020 35.7 0.451 -138.0 32.03 0.3 0.868 -144.8 27.22 22.964 102.7 -33.15 0.022 28.6 0.483 -152.3 30.19 0.4 0.870 -157.3 24.98 17.748 94.9 -32.77 0.023 24.5 0.498 -160.7 28.87 0.5 0.884 -170.8 21.85 12.369 89.3 -33.56 0.021 22.6 0.572 -174.3 27.70 0.6 0.886 -176.3 20.30 10.356 85.4 -33.56 0.021 22.3 0.577 -177.5 26.93 0.7 0.887 179.2 19.01 8.926 82.0 -33.15 0.022 22.1 0.579 179.8 26.08 0.8 0.887 175.4 17.91 7.862 78.8 -32.77 0.023 22.3 0.579 177.4 25.34 0.9 0.886 171.9 16.94 7.033 75.8 -32.40 0.024 22.4 0.578 175.2 24.67 1.0 0.888 168.7 16.05 6.344 72.9 -32.40 0.024 22.6 0.577 173.2 24.22 1.5 0.886 154.7 12.68 4.307 59.5 -30.75 0.029 22.3 0.570 164.0 21.72 2.0 0.885 141.7 10.33 3.284 46.5 -29.37 0.034 19.7 0.560 155.1 18.68 2.5 0.881 128.7 8.57 2.681 33.3 -28.18 0.039 15.0 0.554 146.1 16.18 3.0 0.868 113.6 7.16 2.280 18.8 -26.94 0.045 7.5 0.549 137.6 14.17 3.5 0.876 104.5 6.24 2.051 8.3 -26.66 0.046 1.3 0.566 129.1 13.55 4.0 0.884 95.5 5.21 1.823 -2.2 -26.39 0.048 -4.9 0.584 120.6 12.84 5.0 0.901 77.3 2.70 1.365 -23.3 -25.88 0.051 -17.3 0.618 103.7 11.06 6.0 0.917 59.2 -0.84 0.908 -44.3 -25.40 0.054 -29.7 0.653 86.7 8.44 7.0 0.947 43.4 -3.38 0.678 -63.3 -26.02 0.050 -40.8 0.691 73.8 8.02 8.0 0.960 31.6 -5.73 0.517 -80.8 -26.74 0.046 -52.8 0.732 60.3 7.39 9.0 0.941 23.4 -8.27 0.386 -96.1 -28.18 0.039 -64.6 0.774 47.2 4.27 10.0 0.947 14.1 -10.34 0.304 -111.3 -29.90 0.032 -80.9 0.807 36.1 3.57 11.0 0.938 3.0 -12.18 0.246 -128.0 -33.15 0.022 -114.7 0.826 26.5 2.13 12.0 0.914 -3.7 -13.85 0.203 -142.4 -38.42 0.012 -156.1 0.844 16.7 -0.36 13.0 0.954 -15.0 -15.76 0.163 -162.4 -37.72 0.013 100.7 0.843 7.4 0.47 14.0 0.948 -19.9 -17.79 0.129 -171.0 -39.17 0.011 49.4 0.849 0.8 -2.37 15.0 0.937 -21.1 -18.49 0.119 -178.9 -43.10 0.007 72.7 0.876 -4.6 -2.98 16.0 0.949 -24.6 -18.86 0.114 173.5 -44.44 0.006 78.5 0.873 -8.6 -2.54 17.0 0.947 -33.0 -17.86 0.128 158.9 -38.42 0.012 119.1 0.881 -13.3 -1.06 18.0 0.902 -45.1 -17.20 0.138 141.5 -33.98 0.020 116.4 0.856 -21.4 -3.85 s22 freq fmin rn/50 ga ghz db mag ang db 0.5 0.61 0.434 175.5 0.60 19.42 1.0 0.75 0.490 -170.4 0.80 17.66 2.0 1.03 0.595 -142.6 1.00 15.68 3.0 1.30 0.689 -116.0 1.10 12.74 4.0 1.56 0.763 -93.9 1.10 11.11 5.0 1.86 0.837 -70.1 1.10 9.71 6.0 2.14 0.887 -52.4 1.10 8.56 7.0 2.42 0.918 -39.2 1.20 7.89 8.0 2.70 0.929 -31.4 1.20 6.79 gamma opt
15 notes: 1. f min values at 2 ghz and higher are based on measurements while the f min below 2 ghz have been extrapolated. the f min values are based on a set of 16 noise figure measurements made at 16 different impedances using an atn np5 test system. from these measurements a true fmin is calculated. refer to the noise parameter application section for more information. 2. s and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. the input reference plane is at the end of the gate lead. the output reference plane is at the end of the drain lead. ATF-52189 typical scattering and noise parameters at 25 c, v ds = 3.0v, i ds = 200 ma figure 49. msg/mag & |s21| 2 vs. frequency at 3.0v/200 ma. frequency (ghz) msg/mag & |s21| 2 (db) 018 2 4 6 8 10 12 14 16 40 30 20 10 0 -10 -20 -30 s21 msg mag freq s11 s21 s12 msg/ma g (gh z )m ag. a ng. (db) m ag. a ng. (db) m ag. a ng. m ag. a ng. db 0.1 0.880 -81.4 33.44 46.976 136.0 -35.92 0.016 53.2 0.374 -106.9 34.68 0.2 0.882 -121.9 29.97 31.521 115.1 -33.15 0.022 35.2 0.488 -138.1 31.56 0.3 0.885 -143.0 27.17 22.842 103.3 -32.40 0.024 26.7 0.529 -152.9 29.79 0.4 0.886 -156.1 24.96 17.691 95.3 -32.04 0.025 22.1 0.545 -161.6 28.50 0.5 0.893 -170.1 21.77 12.257 89.6 -33.15 0.022 20.0 0.614 -174.8 27.46 0.6 0.894 -175.8 20.22 10.259 85.7 -32.77 0.023 19.6 0.618 -178.2 26.49 0.7 0.893 179.6 18.93 8.842 82.3 -32.77 0.023 19.7 0.619 179.1 25.85 0.8 0.892 175.6 17.83 7.786 79.1 -32.40 0.024 19.9 0.618 176.6 25.11 0.9 0.891 172.1 16.86 6.967 76.1 -32.40 0.024 20.2 0.617 174.4 24.63 1.0 0.893 168.8 15.96 6.281 73.3 -32.04 0.025 20.5 0.616 172.3 24.00 1.5 0.889 154.6 12.60 4.265 60.0 -30.75 0.029 21.2 0.608 162.8 21.68 2.0 0.887 141.6 10.26 3.258 47.2 -29.37 0.034 19.3 0.597 153.7 18.87 2.5 0.882 128.6 8.50 2.660 34.2 -27.96 0.040 14.6 0.591 144.5 16.25 3.0 0.869 113.5 7.10 2.264 19.8 -26.74 0.046 6.9 0.585 135.8 14.22 3.5 0.877 104.4 6.18 2.037 9.5 -26.50 0.047 0.6 0.600 127.3 13.59 4.0 0.885 95.4 5.16 1.811 -0.9 -26.27 0.049 -5.7 0.616 118.8 12.87 5.0 0.901 77.2 2.66 1.358 -21.6 -25.82 0.051 -18.4 0.647 101.7 11.07 6.0 0.916 59.1 -0.87 0.904 -42.2 -25.39 0.054 -31.0 0.678 84.7 8.45 7.0 0.947 43.2 -3.36 0.679 -60.8 -26.02 0.050 -42.3 0.711 71.9 8.06 8.0 0.960 31.5 -5.68 0.520 -77.8 -26.74 0.046 -54.2 0.747 58.6 7.42 9.0 0.941 23.2 -8.18 0.390 -92.9 -28.18 0.039 -66.1 0.785 45.7 4.41 10.0 0.945 13.9 -10.20 0.309 -107.4 -29.90 0.032 -82.6 0.813 34.8 3.57 11.0 0.937 2.9 -12.04 0.250 -124.1 -33.15 0.022 -116.2 0.830 25.3 2.23 12.0 0.914 -4.0 -13.60 0.209 -137.8 -38.42 0.012 -158.8 0.845 15.6 -0.08 13.0 0.953 -15.3 -15.55 0.167 -157.2 -37.72 0.013 100.1 0.843 6.5 0.64 14.0 0.947 -20.2 -17.46 0.134 -165.2 -39.17 0.011 50.2 0.848 -0.1 -2.10 15.0 0.939 -21.6 -18.20 0.123 -173.2 -43.10 0.007 73.3 0.874 -5.3 -2.59 16.0 0.949 -25.0 -18.49 0.119 178.6 -44.44 0.006 81.7 0.870 -9.2 -2.23 17.0 0.948 -33.4 -17.39 0.135 164.0 -37.72 0.013 121.3 0.876 -14.1 -0.58 18.0 0.902 -45.7 -16.71 0.146 147.2 -33.98 0.020 117.2 0.849 -22.1 -3.52 s22 freq fmin rn/50 ga ghz db mag ang db 0.5 0.75 0.341 174.7 0.50 21.18 1.0 0.84 0.427 -171.1 0.80 19.42 2.0 1.00 0.573 -143.2 1.00 17.13 3.0 1.17 0.688 -116.6 1.10 14.59 4.0 1.32 0.769 -94.3 1.10 10.99 5.0 1.50 0.847 -70.4 1.10 9.83 6.0 1.67 0.903 -52.6 1.10 8.48 7.0 1.83 0.951 -39.3 1.20 7.61 8.0 2.00 0.996 -31.6 1.20 4.30 gamma opt
16 sot 89 package dimensions ordering information part number no. of devices container ATF-52189-tr1 3000 13 reel ATF-52189-blk 100 anti-static bag device models, pcb layout and stencil device refer to agilents web site: www.agilent.com/view/rf dimensions millimeters common min. 1.40 0.44 0.36 0.35 4.40 1.62 2.30 2.13 1.50 bsc 3.00 bsc 3.95 0.90 nom. 1.50 0.50 0.42 0.40 4.50 1.73 2.50 2.20 1.50 bsc 3.00 bsc 4.10 1.10 max. 1.60 0.56 0.48 0.44 4.60 1.83 2.60 2.29 1.50 bsc 3.00 bsc 4.25 1.20 symbol a b b1 c d d1 e e1 e e1 h l notes: 1. dimensioning and tolerancing per ansi.y14.5m-1982 2. controlling dimension: millimeter convertions to inches are not necessarily exact. 3. dimension b1, 2 places. dimensions inches min. 0.055 0.017 0.014 0.014 0.173 0.064 0.090 0.084 0.059 bsc 0.118 bsc 0.155 0.035 nom. 0.059 0.0195 0.0165 0.016 0.177 0.068 0.096 0.087 0.059 bsc 0.188 bsc 0.161 0.038 max. 0.063 0.022 0.019 0.017 0.181 0.072 0.102 0.090 0.059 bsc 0.188 bsc 0.167 0.047 e e1 bottom #3 #2 #1 e1 e a c d d1 l h b1 b #3 #2 #1
device orientation tape dimensions 2gx 2gx 2gx 2gx user feed direction cover tape carrier tape reel + + 8.00 0.10 (0.315 0.004) 4.00 0.10 (0.157 0.004) 1.50 0.10 (0.059+0.004) 1.50 0.25 (0.059+0.010) 2.00 0.05 (0.069 0.004) 1.75 0.10 (0.069 0.004) 5.50 0.05 (0.217 0.002) 12.0 0.30-0.10 (0.472+0.012-0.004) 5 max 1.91 0.10 (0.075 0.004) 4.78 0.10 (0.188 0.004) 0.292 0.013 (0.0115 0.0005) 4.60 0.10 (0.181 0.004) dimensions in mm ( inches ) 8 www.agilent.com/semiconductors for product information and a complete list of distributors, please go to our web site. for technical assistance call: americas/canada: +1 (800) 235-0312 or (916) 788-6763 europe: +49 (0) 6441 92460 china: 10800 650 0017 hong kong: (65) 6756 2394 india, australia, new zealand: (65) 6755 1939 japan: (+81 3) 3335-8152(domestic/international), or 0120-61-1280(domestic only) korea: (65) 6755 1989 singapore, malaysia, vietnam, thailand, philippines, indonesia: (65) 6755 2044 taiwan: (65) 6755 1843 data subject to change. copyright ? 2005 agilent technologies, inc. january 25, 2005 5989-2074en

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